Onto Innovation Wins SK Hynix Award for HBM Defect Technology

Onto Innovation received the Best Partner Award for technology achievement from SK hynix during the memory manufacturer’s 25th Anniversary Partners Day on September 28, 2026. The honor highlights the equipment maker's role in supplying defect prevention and measurement systems critical for high-bandwidth memory production.

"We are proud to be recognized by SK hynix and grateful for the trust they have placed in Onto Innovation," said Mike Plisinski, chief executive officer of Onto Innovation.

Recognition for HBM Yield Improvement

SK hynix recognized Onto Innovation as the only company honored for technology achievement at the event. The award centers on the development of a specialized defect prevention system combined with advanced measurement technology tailored for high-bandwidth memory applications.

"This award is the result of close collaboration between SK hynix and our product and customer success teams to deliver innovations that help identify hidden yield impacting defects critical to reliable HBM manufacturing," said Mike Plisinski, chief executive officer of Onto Innovation.

Manufacturing Complexity in 12- and 16-High Stacks

As artificial intelligence workloads drive demand for higher processing speeds, memory manufacturers are shifting toward 12- and 16-high HBM stacks. These taller configurations require significantly thinner dies and introduce complex assembly processes that elevate the risk of hidden cracks and sub-surface defects during fabrication.

Meeting these precision standards has become essential for chipmakers scaling up production. According to TrendForce data cited in the release, global HBM capacity is expected to increase by more than 50% by 2027 to satisfy persistent AI-driven market demand.